Photoluminescence in erbium doped amorphous silicon oxycarbide thin films

摘要

Photoluminescence (PL) in Er-doped amorphous silicon oxycarbide (a-SiC_xO_y: Er) thin films, synthesized via thermal chemical vapor deposition, was investigated for carbon and oxygen concentrations in the range of 0-1.63. Intense room-temperature PL was observed at 1540 nm, with the PL intensity being dependent on the carbon and oxygen content. The strongest PL intensity was detected for a-SiC_(0.53)O_(0.99):Er when pumped at 496.5 nm, with ～20 times intensity enhancement as compared to a-SiO_2:Er. Broadband excitation in the visible was observed for a-SiC_(0.53)O_(0.99):Er. Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy analyses suggest that the formation of Si-C-O networks plays an important role in enhancing the Er optical activity in a-SiC_xO_y: films.