Control of injected carriers in tetracyano-p-quinodimethane encapsulated carbon nanotube transistors

摘要

We examined transistor characteristics of tetracyano-p-quinodimethane encapsulated single-walled carbon nanotubes (TCNQ@SWNTs). In device operations, a clear conversion to a p-type character was observed and the stability of carriers, previously doped into SWNTs, were simultaneously clarified. Because of an energy band shift, between the electrodes and the doped SWNTs induced by the doping, electron injection was achieved only by application of a high source-drain voltage, while holes were easily injected because of decrease in hole barrier height.