Step erosion during nucleation of InAs/GaAs(001) quantum dots

摘要

We have investigated, by means of atomic force microscopy, the complete evolution of InAs/GaAs(001) quantum dots as a function of deposited InAs. Direct evidence is found for step erosion by quantum dots nucleated onto the step edge and an estimate of the eroded volume is provided. By studying the quantum dots volume as a function of InAs coverage, we show that the wetting layer contribution is confined within a narrow range of coverage around the two- and three-dimensional transition.