Optical properties of highly ordered AIN nanowire arrays grown on sapphire substrate

摘要

Highly ordered AlN nanowire arrays were synthesized via a simple physical vapor deposition method on sapphire substrate. The nanowires have an extremely sharp tip < 10 nm, with the average length around 3 μm. Raman spectroscopy analysis on the AlN nanowire arrays revealed that the lifetime of the phonons is shorter than that in bulk AlN. The transmission spectra of the AlN nanowires showed a blueshift ～0.27 eV at the absorption edge with that of the bulk AlN, which is closely related to the small size of the nanowires.