Effects of temperature on good rectifying characteristic of manganite-based p-n junction

摘要

The good rectifying characteristic of manganite-based p-n junction are reproduced. Different from conventional p-n junctions, the variation of electronic structure of doped manganite with temperature is considered. It is obtained that the diffusion potential of a manganite-based p-n junction decreases with the increasing temperature. It is in good agreement with experimental results.