Electrical characterization of Er- and Pr-implanted GaN films

摘要

Hall, current-voltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Erand Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. However, four defect levels located at 0.300, 0.188, 0.600, and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900℃ for 30 min, and four defect levels located at 0.280, 0.190, 0.610, and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050℃ for 30 min. The origins of the deep defect levels are discussed.