Evidence of formation of Si-C bonds during growth of Si-doped III-V semiconductor compounds

摘要

In this work, we demonstrate that Si-C bonds are formed in III-V semiconductor compounds grown by chemical beam epitaxy. Our results suggest that the formation of Si-C bonds occurs in III-V epitaxial layers with acceptor Carbon residual concentration and high Si concentrations ( >10~(17) cm~(-3)). The main consequence of Si-C bonds is the generation of defects along [111] direction. These defects produce carrier concentration saturation, reduction of electrical mobility, crystal quality degradation, and surface defects.