Studies of Growth-In Defects and Transport Properties Versus Growth Parameters in III-V Compound Semiconductors

摘要

The objectives of this research project are: (1) to investigate the grown-in deep level defects vs. growth parameters (e.g., growth temperature, growth rate, Ga/As ratio, and substrate orientations) in GaAs epilayers grown by liquid phase epitaxial (LPE) and vapor phase epitaxial (VPE) techniques, (2) to study the transport properties vs. growth parameters in the LPE and VPE grown GaAs, and (3) to study the effects of combined thermal and injection annealing on the grown-in defects in the VPE GaAs epilayers.