Preparation of As-doped p-type ZnO films using a Zn_3As_2/ZnO target with pulsed laser deposition

摘要

We report the preparation of arsenic doped p-type ZnO films using a Zn_3As_2/ZnO target by pulsed laser deposition. Zn_3As_2 was used as a p-type dopant source material for arsenic doping in ZnO. The existence of As in the As-doped ZnO films was confirmed by the x-ray photoelectron spectroscopy study. The p-type behavior of the As-doped ZnO films was determined by the Hall and photoluminescence measurements. Room temperature Hall measurements revealed that the As-doped ZnO films exhibited p-type conductivity after being annealed at 200℃ in N_2 ambient for 2 min with the hole concentrations varied between 2.48 X 10~(17) and 1.18 X 10~(18) cm~(-3). The resistivity and carrier mobility of the As-doped p-type ZnO films were in the range of 2.2-6.7 Ω cm and 0.83-11.4 cm~2/V s, respectively. The low temperature photoluminescence measurements confirmed the peak associated with the neutral-acceptor bound exciton (A~0X) emission in the As-doped p-type ZnO films.