Preparation of Na delta-doped p-type ZnO thin films by pulsed laser deposition using NaF and ZnO ceramic targets

摘要

Na δ-doped p-type ZnO thin films were fabricated on quartz substrates with the structure of ZnO/Na (δ-layer) multi-layers by pulsed laser deposition. NaF ceramic target was used as Na source. The effects of oxygen pressure and substrate temperature on the electrical properties of Na 5-doped ZnO thin films are discussed. An optimized result with a resistivity of 29.8Ω • cm, Hall mobility of 0.263 cm~2/V • s, and hole concentration of 7.9 × 10~(17) cm~(-3) is achieved, and electrically stable over several months. The present work is of interest for developing a method to realize p-type ZnO thin films doping with Na.