Molecular hydrogen formation in hydrogenated silicon nitride

摘要

Hydrogen is released from hydrogenated silicon nitride (SiN_x:H) during thermal treatments. The formation of molecular hydrogen (H_2) in SiN_x:H layers with low mass density is confirmed by Raman spectroscopy. However, no H_2 is observed in layers with a high mass density despite clear evidence that hydrogen diffuses through those layers. Therefore hydrogen migrates in those layers in a different form. This is consistent with the observed improvement of the hydrogen passivation of silicon substrates using thermally treated high density SiN_x:H antireflection coatings.