Band offset measurements of ZnO/6H-SiC heterostructure system

摘要

The conduction band offset of n-ZnO-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured by a variety of methods. Temperature dependent current-voltage characteristic, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25, 1.1, and 1.22 eV, respectively.