High quality epitaxial growth of PbTiO_3 by molecular beam epitaxy using H_2O_2 as the oxygen source

摘要

Single crystalline PbTiO_3 films have been epitaxially grown on SrTiO_3 (001) substrates by molecular beam epitaxy using H_2O_2 as the source of active oxygen. The optimum growth conditions have been determined by analyzing a range of growth parameters affecting growth and used to attain single phase and stoichiometric PbTiO_3 thin films. In situ reflection high-energy electron diffraction pattern indicated the PbTiO_3 films to be grown under a two-dimensional growth mode. The full width at half maximum of the rocking curve of a relatively thin 65 nm (001) PbTiO_3 film is 6.2 arc min which is indicative of high crystal quality. The band gap of PbTiO_3, as determined by ellipsometric measurement, is 3.778 eV.