Field emission from honeycomblike network of vertically aligned AlN nanoplatelets

摘要

Honeycomblike network of vertically aligned AlN nanoplatelets was synthesized on etched Si substrate via a simple vapor phase method without catalyst. The nanoplatelets are hexagonal wurtzite AlN and their thickness is 10-100 nm. Field emission (FE) measurements showed that this nanostructure has a low turn-on field of 3.2-5.0 V/μm and a threshold field of 7.8-12.1 V/μm at sample-anode distances of 50-100 μm. The fluctuation of FE current with density of 10 mA/cm~2 over 5 h is lower than 3%. The low turn-on and threshold fields and the small fluctuation of current demonstrate that this two-dimensional AlN nanostructure is a promising FE material.