Red-light-emitting diodes fabricated by near-ultraviolet InGaN chips with molybdate phosphors

摘要

Phosphors Na_5La(MoO_4)_4:xEu~(3+) and NaEu(MoO_4)_2 were prepared with a solid-state reaction technique. Their photoluminescent properties were investigated at room temperature. Bright red-light-emitting diodes were fabricated by coating the phosphors onto near-ultraviolet/ violet-emitting InGaN chips, respectively. The diodes prepared with phosphor Na_5Eu(MoO_4)_4 show appropriate CIE chromaticity coordinates (x=0.65,y=0.34) and exhibit more intensive red emission than that prepared with NaEu(MoO_4)_2, indicating that Na_5Eu(MoO_4)_4 may be applied as an excellent red component for near-ultraviolet InGaN-based white diodes.