Microphotoluminescence study of p-type (Cd,Mn)Te quantum wells

摘要

The carrier density and the spin density were measured locally in p-doped quantum wells made of the diluted magnetic semiconductor (Cd,Mn)Te. Both densities were derived from microphotoluminescence maps recorded under a magnetic field. The presence of the hole gas was achieved either by nitrogen doping, or by employing surface acceptor states. The authors found that the correlation length of the carrier density fluctuations is larger (3 μm) for surface doping than for nitrogen doping (<1 μm), with no effect of the disorder introduced by the Mn ions. The spin density fluctuates on a smaller scale.