Highly stable temperature characteristics of InGaN blue laser diodes

摘要

We report stable temperature characteristics of threshold current and output power in InGaN blue laser diodes emitting around 450 nm. The threshold current is changed by < 3 mA in operation temperature range from 20 to 80℃, and even negative characteristic temperature is observed in a certain temperature range. This peculiar temperature characteristic is attributed to originate from unique carrier transport properties of InGaN quantum wells with high In composition, which is deduced from the simulation of carrier density and optical gain. In addition, slope efficiency is also maintained well and wall plug efficiency is even improved as temperature increases.