Terahertz detection with tunneling quantum dot intersublevel photodetector

摘要

The characteristics of a tunnel quantum dot intersublevel photodetector, designed for the absorption of terahertz radiation, are described. The absorption region consists of self-organized In_(0.6)Al_(0.4)As/GaAs quantum dots with tailored electronic properties. Devices exhibit spectral response from 20 to 75 μm (～4 THz) with peak at ～50 μm. The peak responsivity and specific detectivity of the device are 0.45 A/W and 10~8 cm Hz~(1/2)/W, respectively, at 4.6 K for an applied bias of 1 V. Response to terahertz radiation is observed up to 150 K.