The characteristics of a tunnel quantum dot intersublevel photodetector, designed for the absorption of terahertz radiation, are described. The absorption region consists of self-organized In0.6Al0.4As/GaAsIn0.6Al0.4As∕GaAs quantum dots with tailored electronic properties. Devices exhibit spectral response from 20 to 75 μm20to75μm ( ∼ 4 THz)(∼4THz) with peak at ∼ 50 μm∼50μm. The peak responsivity and specific detectivity of the device are 0.45 A/W0.45A∕W and 108 cm Hz1/2/W108cmHz1∕2∕W, respectively, at 4.6 K4.6K for an applied bias of 1 V1V. Response to terahertz radiation is observed up to 150 K150K.
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