Fabrication of field-effect transistor devices with fullerodendron by solution process

摘要

Yuuki Sako; Yutaka Takaguchi; Akihiko Fujiwara; Nima Akima; Yoshihiro Iwasa; Shojun Hino n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO_2/Si, polyimide/Au/poly(ethylene terephthalate), and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution processes. The value of field-effect mobility μ of the fullerodendron FET reaches 1.7 X 10~(-3) cm~2 V~(-1) s~(-1) at 300 K. The mobility gap and optical gap have been estimated to be 0.15 and 1.4 eV, respectively. The channel conduction in the FET device follows thermally activated hopping-transport mechanism below 300 K.