Etching of lithium niobate using standard Ti indiffusion technique

摘要

We present evidence of etching LiNbO_3 when annealing two wafers in contact with an intermediate Ti strip. Etched features are characterized qualitatively using atomic force microscopy. The impact of the Ti strip thickness on the depth and roughness of the etched surface is quantified. Etched trenches of similar depths to the original Ti film are achieved with very smooth etched surface.