Realization of II-type attenuator using Ti(N) thin films for the fourth generation of mobile telecommunications

摘要

The performances of 20 dB and 25 W II-type attenuators prepared using Ti(N) thin film resistors on AlN substrates were investigated at applied frequencies of 3 and 6 GHz. An attenuation and voltage standing wave ratio (VSWR) were significantly improved by a design of L/W (length/width) ratios of main resistor R_2. The chip design with L/ W ratio of 3.0 was observed as an optimal condition for the attenuators. The attenuator prepared at L/W of 3.0 shows the attenuation tolerance of 1.10 dB and VSWR of 1.21 at an applied frequency of 6 GHz.