Scanning gate microscopy of copper phthalocyanine field effect transistors

摘要

Various techniques are developed to implement ambient scanning gate microscopy (SGM) as a tool for the characterization of organic-thin-film field-effect transistors (OFETs). OFETs comprising copper phthalocyanine have been investigated by this technique and their SGM response has been observed only at the edges of the metal electrodes, thereby providing visualization of the Schottky barrier at the boundary between the organic channel and the metal electrode.