Quantum dot solar cell tolerance to alpha-particle irradiation

摘要

The effects of alpha-particle irradiation on an InAs quantum dot (QD) array and GaAs-based InAs QD solar cells were investigated. Using photoluminescence (PL) mapping, the PL intensity at 872 and 1120 nm, corresponding to bulk GaAs and InAs QD emissions, respectively, were measured for a five-layer InAs QD array which had a spatially varying total alpha-particle dose. The spectral response and normalized current-voltage parameters of the solar cells, measured as a function of alpha-particle fluence, were used to investigate the change in device performance between GaAs solar cells with and without InAs QDs.