Magnetic and magnetotransport properties of (AlGaN/GaN):Mg/(GaMnN) heterestructures at room temperature

摘要

Dilute magnetic semiconductor films (GaMnN) are highly resistive, making transport measurements difficult to achieve. However, when GaMnN films are sandwiched between p-type doped (AlGaN/GaN) strained-layer superlattices, holes from the superlattice interact with the Mn~(3+/2+) ions and transport measurements were realized. The authors have found also that the ferromagnetic properties of GaMnN critically depend on the level of p-type doping in the superlattice. They report anomalous Hall effect measurements in this (AlGaN/GaN) :Mg/(GaMnN) multilayered structure. The current results also demonstrate the role of carriers, especially holes, in mediating the ferromagnetic properties of GaMnN dilute magnetic semiconductor films.