Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction

摘要

p-type InGaAs/Si heteroj unctions were fabricated through a wafer fusion bonding process. The relative band alignment between the two materials at the heterointerface was determined using current-voltage (Ⅰ-Ⅴ) measurements and applying thermionic emission-diffusion theory. The valence and conduction band discontinuities for the InGaAs/Si interface were determined to be 0.48 and -0.1 eV, respectively, indicating a type-Ⅱ band alignment.