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Angle‐resolved photoemission measurements of band discontinuities in the GaAs‐Ge heterojunction

机译：GaAs-Ge异质结中的带状不连续性的角度解析的光电调查

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P. Perfetti; D. Denley; K. A. Mills; D. A. Shirley;
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年度 1978
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机译：背面分辨角发射光谱研究TiN / LaO / HfSiO / SiO_2 / Si栅堆叠结构中深度剖面和能带不连续性的退火效应
2. Measurement of semiconductor heterojunction band discontinuities by x‐ray photoemission spectroscopy [J] . Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films . 1985,第3期

机译：用X射线光发射光谱法测量半导体异质结带的不连续性
3. Erratum: “Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction” [Appl. Phys. Lett. 90, 222111 (2007)] [J] . McKay Kyle S., Lu Felix P., Kim Jungsang, Applied Physics Letters . 2012,第12期

机译：勘误表：“晶圆键合的InGaAs / Si异质结的能带不连续性测量”物理来吧90，222111（2007）]
4. Measurement of valence band edge discontinuity for the InAlAs/GaAsSb heterojunction lattice-matched to InP [C] . Martinez, M.J., Scherer, Indium Phosphide and Related Materials, 1992., Fourth International Conference on . 1992

机译：InAlAs / GaAsSb异质结与InP匹配的价带边缘不连续性的测量
5. Heterojunctions of the GaAs/AlGaAs system: Crystal growth by metalorganic chemical vapor deposition and characterization using capacitance-voltage techniques for the determination of the conduction band discontinuity [D] . Kawase, Yoshihiro 1987

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7. Valence Band Dispersion Measurements of Perovskite Single Crystal with Angle-resolved Photoemission Spectroscopy [O] . Wang, Congcong, Ecker, Benjamin R., Gao, Yongli, 2016

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8. Low-Temperature Photoemission Measurements of Valence-Band Discontinuities atBuried Heterojunctions [R] . Yu, X., Raisanen, A., Haugstad, G., 1990

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Angle‐resolved photoemission measurements of band discontinuities in the GaAs‐Ge heterojunction

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