Thermal stability of metal organic vapor phase epitaxy grown AlInN

摘要

AlInN layers with a thickness of 100 nm were grown by metal organic vapor phase epitaxy on GaN buffer layers on Si(111) substrates. By varying the growth temperature, In and NH_3 flows, and reactor pressure, three series with different In contents were produced and thermally treated in the temperature range from 30 to 960℃. The as grown and annealed layers were investigated by x-ray diffraction in standard and grazing incidence geometry. Nearly lattice matched samples with an indium concentration of 17%—18% show long time stability at annealing temperatures as high as 960℃. At higher temperatures, the onset of severe Ga-Si meltback etching prevents further measurements. Nonlattice matched samples consist of pseudomorphic and relaxed parts. In the latter, a redistribution and loss of indium is observed upon annealing.