Effects of optical coupling in Ⅲ-Ⅴ multilayer systems

摘要

A method to visualize and investigate radiative recombination processes in compound semiconductor materials by utilizing the effect of optical coupling in Ⅲ-Ⅴ multilayer systems is presented. For this purpose, a semiconductor material of interest is grown on an activated germanium (Ge) substrate which then serves as a photodiode. By means of spectral response measurements of the Ge photodiode, a response signal from the upper layers can be detected. It is proven both by experiment and by modeling that the signals from these layers can only be explained by optical transport mechanisms, i.e., radiative recombination.