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Dependence of Electronic and Optical Properties of MoS2 Multilayers on the Interlayer Coupling and Van Hove Singularity

机译:MoS2多层电子和光学性质对层间耦合和Van Hove奇异性的依赖

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摘要

In this paper, the structural, electronic, and optical properties of MoS2 multilayers are investigated by employing the first-principles method. Up to six-layers of MoS2 have been comparatively studied. The covalency and ionicity in the MoS2 monolayer are shown to be stronger than those in the bulk. As the layer number is increased to two or above two, band splitting is significant due to the interlayer coupling. We found that long plateaus emerged in the imaginary parts of the dielectric function ε2xxω and the joint density of states (JDOS) of MoS2 multilayers, due to the Van Hove singularities in a two-dimensional material. One, two and three small steps appear at the thresholds of both the long plateau of ε2xxω and JDOS, for monolayer, bilayer, and trilayer, respectively. As the number of layers further increased, the number of small steps increases and the width of the small steps decreases accordingly. Due to interlayer coupling, the longest plateau and shortest plateau of JDOS are from the monolayer and bulk, respectively.Electronic supplementary materialThe online version of this article (10.1186/s11671-019-3105-9) contains supplementary material, which is available to authorized users.
机译:本文采用第一性原理研究了MoS2多层膜的结构,电子和光学性质。已对多达六层的MoS2进行了比较研究。已显示MoS2单层中的共价性和离子性比本体中的强。随着层数增加到两层或两层以上,由于层间耦合,带分裂很明显。我们发现,介电函数 ε 2 xx ω 和MoS2多层的状态联合密度(JDOS),这是由于二维材料中的Van Hove奇异性造成的,其中一,二和三小步骤在 ε 2 xx < mi>ω 和JDOS,分别用于单层,双层和三层,随着层数的进一步增加,小步的数量增加,小步的宽度减小因此,由于层间耦合,最长的平稳期和最短的p电子补充材料本文的在线版本(10.1186 / s11671-019-3105-9)包含补充材料,授权用户可以使用。

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