Droplet evaporation-induced ferritin self-assembled monolayer as a template for nanocrystal flash memory

摘要

A nonvolatile nanocrystal (NC) memory containing a ferritin core was fabricated. A ferritin monolayer was formed through a droplet evaporation technique. High-pressure hydrogen (HP-H_2) annealing effectively reduced iron oxide (Fe_2O_3) to form conductive iron NC. In addition, HP-H_2 annealing also improved memory characteristics by passivation of the interface states at Si/HfO_2. The authors observed good memory characteristics, including fast program/erase (P/E) operation, a memory window of 1.75 V under ±6 V, and a stable memory window up to 10~4 s at 85℃.