Differences in emission spectra of Si- and C-core partial dislocations

摘要

The spectra for individual Si- and C-core partial dislocations were obtained using optical emission microscopy. Both electroluminescence and photoluminescence revealed similar spectra. The Si-core spectra peaked at 700 nm, consistent with the reported spectra from collection of dislocations. For the C core, a dominant IR band starting at 850 nm was revealed for injections around 0.1 A/cm~2. For an injection at 1 A/cm~2, this band saturated and a band at 700 nm dominated. This C-core band at 700 nm was broader, and its intensity peak was lower than the Si core. Results are discussed along with existing theoretical models of deep levels.