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Enhancement by electric field of high-speed photoconductivity in AlGaN/GaN heterostructures

机译:通过电场增强AlGaN / GaN异质结构中的高速光电导性

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The authors report a large response in the conductivity of AlGaN/GaN heterostructures to a 10 ns UV laser pulses. The dynamics of the conductivity response follows the time evolution of the laser pulse. This fast photoconductivity component shows a remarkable enhancement in high electric fields. For the field ≈ 15 kV/cm, it increases by at least one order of magnitude at temperatures of 4.2 and 300 K. This photoconductivity enhancement is found to be related to the hot electron effect. The authors propose an explanation for the observed phenomena. The mechanism of the photoconductivity enhancement involves nonequilibrium LO phonons generated by hot carriers.
机译:作者报告说,AlGaN / GaN异质结构的电导率对10 ns紫外激光脉冲有很大的响应。电导率响应的动力学遵循激光脉冲的时间演变。这种快速的光电导成分在高电场中显示出显着的增强。对于≈15 kV / cm的场,在4.2和300 K的温度下,它至少增加一个数量级。发现这种光电导性增强与热电子效应有关。作者对观察到的现象提出了解释。光电导增强的机制涉及由热载流子产生的非平衡LO声子。

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