High insulating quality CaF_2 pseudomorphic films on Si(111)

摘要

Current-voltage characteristics of epitaxially grown Au/CaF_2/Si(111) metal-insulator-semiconductor structures with thin (1.5-6 nm) pseudomorphic fluoride layer have been studied. It was found that CaF_2 films in these structures are of better insulating quality than those in the devices reported previously. Typical breakdown field for the fluorite layers was about 8 X 10~6 V/cm and the tunnel current did not exceed the values predicted by simulations with realistic parameters.