On-chip electron-impact ion source using carbon nanotube field emitters

摘要

A lateral on-chip electron-impact ion source utilizing a carbon nanotube field emission electron source was fabricated and characterized. The device consists of a cathode with aligned carbon nanotubes, a control grid, and an ion collector electrode. The electron-impact ionization of He, Ar, and Xe was studied as a function of field emission current and pressure. The ion current was linear with respect to gas pressure from 10~(-4) to 10~(-1) Torr. The device can operate as a vacuum ion gauge with a sensitivity of approximately 1 Torr~(-1). Ion currents in excess of 1 μA were generated.