The authors propose a simple physical model of threshold switching in phase change memory cells based on the field induced nucleation of conductive cylindrical crystallites. The model is solved analytically and leads to a number of predictions including correlations between the threshold voltage V_(th) and material parameters, such as the nucleation barrier and radius, amorphous layer thickness, as well as V_(th) versus temperature and switching delay time. The authors have carried out verifying experiments, and good agreement is achieved.
展开▼
