Deep level defects which limit current gain in 4H SiC bipolar junction transistors

摘要

The authors employ a very sensitive electrically detected electron spin resonance technique called spin dependent recombination to observe recombination centers in fully processed 4H SiC n-p-n bipolar junction transistors. Their measurements indicate that the observed dominating recombination defect in these transistors is an intrinsic center of high symmetry, most likely a vacancy. This defect likely plays a dominating role in limiting the current gain in these 4H SiC devices.