Short wavelength (λ=2.13 μm) intersubband luminescence from GaN/AlN quantum wells at room temperature

摘要

The authors report the observation of room-temperature intersubband luminescence at λ=2.13 μm from GaN/AlN quantum wells under optical pumping at λ=0.98 μm. The quantum wells are designed to exhibit three bound states in the conduction band. The emission arises from the e_3e_2 intersubband transition. Photoluminescence excitation spectroscopy shows that the emission is only observed for p-polarized excitation at wavelengths corresponding to the e_1e_3 intersubband transition. The measured external quantum efficiency is 10 pW/W.