Single Schottky-barrier photodiode with interdigitated-finger geometry: Application to diamond

摘要

The authors propose a single Schottky-barrier photodiode (SPD) with interdigitated Ohmic and Schottky contacts. A homoepitaxial diamond layer with low boron concentration has been utilized as an example for the fabrication of solar-blind deep-ultraviolet detector. This device structure enables the operations in both photoconductive mode with large photocurrent gain and depletion mode with fast response speed. The photosensitivity and spectral response of such kind of device are greatly improved when compared with a conventional SPD with semitransparent dotted Schottky contact. The present device structure can be extended to other semiconductor photodetectors.