Tuning InAs quantum dots for high areal density and wideband emission

摘要

The authors report the effect of growth temperature and monolayer coverage on areal density and photoluminescence spectral width of InAs quantum dot (QD). Areal density and spectral width were found to be strongly dependent on growth temperature and monolayer coverage, respectively. Upon proper tuning, both high areal density and large photoluminescence spectral width were obtained. Areal density of 1.5 X 10~(11) cm~(-2) is four times higher than those previously reported, while spectral width of 136 nm is the broadest spectral width obtained without any forms of band gap engineering. These results will contribute to an improvement in the performance of QD superluminescent diode.