Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p- and n-doping layers

摘要

The authors measured the temperature dependence of the lasing properties of current-injection T-shaped GaAs/AlGaAs quantum-wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire lasers with high-reflectivity coatings on both cleaved facets achieved continuous-wave single-mode operation between 5 and 110 K. The lowest threshold current was 2.1 mA at 100 K. The temperature dependences of differential quantum efficiency and threshold current were attributed mainly to that of current-injection efficiency.