Temperature-dependent photoluminescence of quasialigned Al-doped ZnO nanorods

摘要

Temperature-dependent photoluminescence (PL) properties of quasialigned Al-doped ZnO nanorods grown by thermal evaporation method were investigated. The ionization energy of the Al donor was determined to be ～90 meV. A PL peak at 3.315 eV was observed at low temperature and was tentatively related to excitons bound to surface defects. The emission, along with its first longitudinal optical phonon replica, persists up to room temperature and dominates the near band edge (NBE) emission of the nanorods. The doping of Al results in a redshift of ～0.04 eV of the room-temperature NBE emission of the ZnO nanorods.