首页> 外文期刊>Applied Physics Letters >Dislocation junctions as barriers to threading dislocation migration
【24h】

Dislocation junctions as barriers to threading dislocation migration

机译:位错连接点成为线程位错迁移的障碍

获取原文
获取原文并翻译 | 示例
       

摘要

Level set simulations of dislocation dynamics in biaxially strained, heteroepitaxial films reveal interesting kinetic and thermodynamic mechanisms for blocking the migration of threading dislocations. Two dislocations on the same or on intersecting slip planes may react to form a threading dislocation segment that does not glide under the influence of the misfit strain. In the coplanar case, a kinetic barrier exists that slows down dislocation migration. For the reaction involving dislocations on intersecting planes, an energetic barrier impedes other advancing dislocations. These barriers create significant and frequent impediment to threading dislocation flow, resulting in pileups and high threading dislocation densities.
机译:在双轴应变的异质外延薄膜中位错动力学的能级组模拟显示了有趣的动力学和热力学机制,可以阻止穿线位错的迁移。同一或相交滑移面上的两个位错可能会反应形成一个螺纹位错段,该段在错配应变的影响下不会滑动。在共面情况下,存在动力学壁垒,减慢了位错迁移。对于涉及相交平面上位错的反应,高能屏障会阻碍其他前进的位错。这些障碍严重且频繁地阻碍了螺纹错位流动,从而导致堆积和高螺纹错位密度。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号