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The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers

机译：III-氮化物外膜中分离的螺纹脱位的异质成核

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J. Smalc-Koziorοwska; J. Moneta; P. Chatzopoulou; I. G. Vasileiadis; C. Bazioti; Ø. Prytz; I. Belabbas; Ph. Komninou; G. P. Dimitrakopulos;
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1. Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350nm light emitting diodes [J] . Richard Gutt, Lutz Kirste, Thorsten Passow, Physica status solidi, B. Basic research . 2010,第7期

机译：GaN成核作用可有效降低350nm发光二极管的AlGaN外延层中穿线边缘位错密度
2. Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress [J] . Konishi, Kazuya, Yamamoto, Journal of Applied Physics . 2013,第1期

机译：在高电流应力下从4H-SiC外延层的基底平面位错的堆叠断层扩展转换为穿线边缘位错
3. Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress [J] . Kazuya Konishi, Shigehisa Yamamoto, Shuhei Nakata, Journal of Applied Physics . 2013,第1期

机译：在高电流应力下从4H-SiC外延层的基底平面位错的堆叠断层扩展转换为穿线边缘位错
4. Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures [C] . Xuan Zhang, Masahiro Nagano, Hidekazu Tsuchida European conference on silicon carbide and related materials . 2013

机译：通过在高温下退火4H-SiC脱垂基底平面脱位转换到穿线边缘位错
5. Reducing Threading Dislocation in GaSb Epilayer Grown on GaAs Substrate for Photovoltaic and Thermophotovoltaic Application [D] . Mansoori, Ahmad. 2019

机译：减少在GaAs底物上生长在GaAs底物上的喘气脱位，用于光伏和蒸煮器应用
6. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs [O] . Huan-Yu Shih, Makoto Shiojiri, Ching-Hsiang Chen, -1

机译：接近无应变的GaN兼容缓冲层上GaN外延层中的超低穿线位错密度及其在异质外延LED中的应用
7. THEORETICAL CONSIDERATION OF MISFIT DISLOCATION NUCLEATION BY PARTIAL DISLOCATIONS IN 001 STRAINED-LAYER HETEROSTRUCTURES [O] . ZOU J, COCKAYNE D 1993

机译：001应变层异质结构中错位错位成核的理论考虑
8. Criterion for Arrest of a Threading Dislocation in a Strained Epitaxial Layer Dueto an Interface Misfit Dislocation in Its Path [R] . Freund, L. B. 1990

机译：应变外延层中线程位错逮捕的判据及其路径中的界面错配位错

The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers

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