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Impurity bands and the character of the electronic states in ferromagnetic GaMnAs layers

机译:铁磁GaMnAs层中的杂质带和电子态特征

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The interplay between disorder and spin polarization in a GaMnAs thin layer results into spin-polarized impurity hole bands. A figure of merit is defined to label the nature of the sample as metallic or nonmetallic. It is shown that samples with the highest figures of merit have a ratio between the extended hole density and the Mn concentration near 0.2, in agreement with the ratio of 0.1-0.25 known to occur among samples produced with the highest Curie temperatures. Both the nonmetal-to-metal and the metal-to-nonmetal transitions experimentally observed in the ferromagnetic regime are obtained as the Mn concentration increases.
机译:GaMnAs薄层中无序和自旋极化之间的相互作用导致自旋极化的杂质空穴能带。定义了品质因数以将样品的性质标记为金属或非金属。结果表明,具有最高品质因数的样品的扩展孔密度与Mn浓度之比接近0.2,与居里温度最高的样品中已知的0.1-0.25的比例一致。随着Mn浓度的增加,获得了在铁磁状态下实验观察到的非金属到金属和金属到非金属的转变。

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