The effect of the last quantum barrier on the internal quantum efficiency of InGaN-light emitting diode

摘要

The effect of the last quantum barrier (LQB) on the internal quantum efficiency of GaN-light emitting diode (LED) was systematically investigated using a dual-wavelength GaN-LED design. Compared with a conventional GaN-LQB, a high indium contained In_(0.03)Ga_(0.97)N-LQB efficiently reduced the unintentional Mg impurity in the last quantum well and improved its photoluminescence and electroluminescence intensity up to 72% and 15%, respectively.