Visible photoemission from InN

摘要

At 5.8 eV, InN has one of the highest electron affinities of any semiconductor. Upon applying cesium and oxygen to a previously hydrogen cleaned InN surface, visible photoemission was observed. The InN spectral response confirms the standard model of photoemission yield with an inclusion of a tunneling factor for the electron escape probability. The existence of photoemission beyond 950 nm supports the case for a lower bandgap in this material.