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High-bias breakdown of Au/1,4-benzenedithiol/Au junctions

机译:Au / 1,4-苯二硫醇/ Au连接的高偏压击穿

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We have studied the high-bias breakdown of Au/1,4-benzenedithiol (BDT)/Au junctions at room temperature. Exploiting the break junction technique, we held a Au/BDT/Au junction and raptured it by applying a voltage ramp. The conductance first changes gradually with the bias and then abruptly increases at breakdown. We found that the breakdown voltage shows a broatl distribution and takes a maximum at ~(1.2-1.5)V. The breakdown voltage is unaffected by the ambient atmosphere but tends to slightly decrease with increasing the junction conductance. We consider that the Au electrode becomes unstable at the breakdown voltage and collapses to crush the junction.
机译:我们已经研究了室温下Au / 1,4-苯二硫醇(BDT)/ Au结的高偏压击穿。利用断开结技术,我们保持了一个Au / BDT / Au结,并通过施加电压斜坡使其升起。电导率首先随着偏压逐渐变化,然后在击穿时突然增加。我们发现击穿电压呈现出肉芽状分布,并在〜(1.2-1.5)V处达到最大值。击穿电压不受周围环境的影响,但随着结电导率的增加趋于稍微降低。我们认为,Au电极在击穿电压下变得不稳定,并崩溃而使结破裂。

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