Observation of near interface oxide traps in single crystalline Nd_2O_3 on Si(111) by quasistatic C-V method

摘要

Single crystalline Nd_2O_3 based capacitors with proper forming gas annealing treatment are fabricated. By elevating the temperature of substrate to 100 ℃, near interface oxide traps are observed according to the quasistatic C-V obtained at low frequency. Two types of traps, interface traps and near interface oxide traps, are demonstrated in this gate stack. Using the low-high frequency method, the interface trap density at flatband voltage condition and the near interface oxide trap density are estimated to be 5.17 × 10~(11) eV~(-1) cm~(-2) and 3.75 × 10~(12) cm~(-2), respectively. The interface trap density is then further confirmed by the conductance method.