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Germanium-induced stabilization of a very high-k zirconia phase in ZrO_2/GeO_2 gate stacks

机译:锗诱导ZrO_2 / GeO_2栅堆叠中非常高k的氧化锆相的稳定化

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摘要

Electrical data on ZrO_2/GeO_2 stacks prepared by atomic oxygen beam deposition on Ge at 225℃ reveal a relatively weak dependence of the stack equivalent oxide thickness upon the ZrO_2 thickness. This trend points to a very high zirconia dielectric permittivity (k) value which is estimated to be around 44. This is indicative of zirconia crystallization into a tetragonal phase which is also supported by x-ray diffraction data. X-ray photoelectron spectroscopy analysis is in line with the assumption that due to a finite GeO_2 decomposition, Ge is incorporated into the growing ZrO_2, thus, stabilizing the high-k tetragonal phase.
机译:通过在225℃的Ge上进行原子氧束沉积制备的ZrO_2 / GeO_2堆的电学数据表明,堆等效氧化物厚度对ZrO_2厚度的依赖性相对较弱。这种趋势表明氧化锆介电常数(k)值非常高,估计约为44。这表明氧化锆结晶为四方相,这也得到了X射线衍射数据的支持。 X射线光电子能谱分析符合以下假设:由于有限的GeO_2分解,Ge被掺入到正在生长的ZrO_2中,从而稳定了高k四方相。

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